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VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A 600 V 600 V
IC25 75 A 75 A
VCE(sat) 2.5 V 3.0 V
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 22 Clamped inductive load, L = 30 H TC = 25C
Maximum Ratings 600 600 20 30 75 40 150 ICM = 80 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
C G = Gate, E = Emitter, C = Collector, TAB = Collector
Mounting torque (M3)
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5 200 1 100 40N60 40N60A 2.5 3.0 V V A mA nA V V
Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125C)
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BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
l l l l l
l
l
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density
(c) 1996 IXYS All rights reserved
91513E (3/96)
IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 35 S TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
4500 VCE = 25 V, VGE = 0 V, f = 1 MHz 300 60 200 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, T J = 25C IC = IC90 , VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 22 Switching times may increase for VCE (Clamp) > 0.8 * V CES, 40N60A higher TJ or increased RG 40N60A Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES , RG = R off = 22 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher 40N60 TJ or increased R G 40N60A 40N60 40N60A 45 88 100 200 600 200 3 100 200 4 600 600 300 12 6 1000 2000 800 250 80 120
pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 0.5 K/W TO-204AE Outline
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
0.25
K/W
1 = Gate 2 = Emitter Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A
Fig. 1 Saturation Characteristics
80
T J = 25C
Fig. 2 Output Characterstics
350 300
VGE = 15V 13V 11V 9V T J = 25C
70 60 50 40 30 20 10 0
VGE = 15V 13V 11V 9V 7V 5V
IC - Amperes
IC - Amperes
250 200 150 100 50 0
7V
5V
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
T J = 25C
Fig. 4 Temperature Dependence of Output Saturation Voltage
1.5 1.4
IC = 80A
VCE(sat) - Normalized
1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150
IC = 20A IC = 40A
VCE - Volts
6 5 4 3 2 1 0 4 5 6 7 8 9 10 11 12 13 14 15
IC = 40A IC = 20A
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
80
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGE(th) @ 250A
60
BV / VCE(sat) - Normalized
70
VCE = 100V
1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150
BVCES @ 3mA
IC - Amperes
50 40 30 20
TJ = 25C
10 0
T J = 125C
0
1
2
3
4
5
6
7
8
9
10
VGE - Volts
(c) 1996 IXYS All rights reserved
TJ - Degrees C
IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A
Fig.7 Gate Charge
15
IC = 40A
Fig.8 Turn-Off Safe Operating Area
100
12
V CE = 500V
T J = 125C
10
dV/dt < 3V/ns
9 6 3 0
IC - Amperes
0 50 100 150 200 250
VGE - Volts
1
0.1
0.01 0 100 200 300 400 500 600 700
Total Gate Charge - (nC)
VCE - Volts
Fig.9 Capacitance Curves
4500 4000
Cies
Capacitance - pF
3500 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25
Cres Coes
VCE - Volts
Fig.10 Transient Thermal Impedance
1
D=0.5
Zthjc (K/W)
0.1 D=0.2
D=0.1 D=0.05 D=0.02 D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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